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HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
December 2001
14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
* Logic Level Gate Drive * Internal Voltage Clamp * ESD Gate Protection * TJ = 175 C * Ignition Energy Capable
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Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.
PACKAGING AVAILABILITY PART NUMBER HGTP14N36G3VL HGT1S14N36G3VL HGT1S14N36G3VLS PACKAGE TO-220AB TO-262AA TO-263AB BRAND 14N36GVL 14N36GVL 14N36GVL
COLLECTOR (FLANGE)
JEDEC TO-262AA
EMITTER COLLECTOR GATE
JEDEC TO-263AB
COLLECTOR (FLANGE) GATE EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S14N36G3VLS9A.
The development type number for this device is TA49021.
R1 GATE R2
EMITTER
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 390 24 18 14 10 17 12 332 100 0.67 -40 to +175 260 6
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous at VGE = 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 5V, TC = +100oC . . . . . . . . . . . . . . . . . . . . . . IC100 Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Inductive Switching Current at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . ISCIS at L = 2.3mH, TC = + 175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy at L = 2.3mH, T C = +25oC. . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Electrostatic Voltage at 100pF, 1500 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD NOTE: May be exceeded if IGEM is limited to 10mA.
(c)2001 Fairchild Semiconductor Corporation
UNITS V V A A V A A mJ W W/oC o C o C KV
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage SYMBOL BVCER TEST CONDITIONS IC = 10mA, VGE = 0V RGE = 1k TC = +175oC TC = +25oC TC = -40oC Gate-Emitter Plateau Voltage VGEP IC = 7A, VCE = 12V IC = 7A, VCE = 12V IC = 7A RG = 1000 IC = 10mA VCE = 250V RGE = 1k TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +175oC TC = +25oC TC = +25oC TC = +25oC VGE = 10V IGES = 2mA IC = 7A, RL = 28 RG = 25, L = 550H, VCL = 300V, VGE = 5V, TC = +175oC L = 2.3mH, VG = 5V, TC = +175oC TC = +25oC MIN 320 330 320 TYP 355 360 350 2.7 MAX 400 390 385 UNITS V V V V
Gate Charge
QG(ON)
-
24
-
nC
Collector-Emitter Clamp Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current
BVCE(CL)
350
380
410
V
BVECS ICER
24 1.3
28 1.25 1.15 1.6 1.7 1.8
25 250 1.45 1.6 2.2 2.9 2.2
V A A V V V V V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC = 7A VGE = 4.5V
IC = 14A VGE = 5V
Gate-Emitter Threshold Voltage
VGE(TH)
IC = 1mA VCE = VGE
Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load
R1 R2 IGES BVGES tD(OFF)I + tF(OFF)I
10 330 12 -
75 20 500 14 7
30 1000 -
k A V s
Inductive Use Test
ISCIS
12 17 -
-
1.5
o
A A C/W
Thermal Resistance
RJC
(c)2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Typical Performance Curves
PULSE DURATION = 250s, DUTY CYCLE <0.5%, VCE = 10V 25 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 40 10V 30 4.5V 5.0V PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = +25oC
20
15
20
4.0V
10 +175oC 5 -40oC 0 1 2 3 4 5 VGE, GATE-TO-EMITTER VOLTAGE (V) +25oC
3.5V 10 3.0V 2.5V 0 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 10
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
ICE , COLLECTOR EMITTER CURRENT (A)
TC = +175oC 30 25 20
VGE = 5.0V
ICE , COLLECTOR EMITTER CURRENT (A)
35
35 VGE = 4.5V 30 25
-40oC +25oC +175oC
VGE = 4.5V
20 15 10 5 0
VGE = 4.0V 15 10 5 0 0 4 1 2 3 VCE(SAT) , SATURATION VOLTAGE (V) 5
0
1
2
3
4
5
VCE(SAT) , SATURATION VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE
1.35 ICE = 7A VCE(SAT) , SATURATION VOLTAGE (V) VCE(SAT) , SATURATION VOLTAGE (V)
2.25 ICE = 14A
VGE = 4.0V
VGE = 4.0V 2.00
1.25
VGE = 4.5V
1.15
1.75 VGE = 4.5V
1.05 -25
VGE = 5.0V +25 +75 +125 TJ , JUNCTION TEMPERATURE (oC) +175
1.50 -25 +25 +75
VGE = 5.0V +125 +175 TJ , JUNCTION TEMPERATURE (oC)
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE
(c)2001 Fairchild Semiconductor Corporation
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Typical Performance Curves (Continued)
ICE, COLLECTOR-EMITTER CURRENT (A) VGE = 5V VGE(TH), NORMALIZED THRESHOLD VOLTAGE 20 18 16 14 12 10 8 6 4 2 0 +25 +50 +75 +125 +100 TC, CASE TEMPERATURE (oC) +150 +175 1.2 1.1 1.0 ICE = 1ma
0.9 0.8 0.7 0.6 -25 +25 +75 +125 TJ , JUNCTION TEMPERATURE (oC) +175
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF CASE TEMPERATURE
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE
7.0
1E4
VECS = 20V t(OFF)I, TURN OFF TIME (s)
VCE = 300V, VGE = 5V 6.5 6.0 5.5 5.0 4.5 4.0 3.5 RGE = 25, L = 550H RL = 37, ICE = 7A
LEAKAGE CURRENT (A)
1E3
1E2
1E1
VCES = 250V
1E0
1E-1 +20 +60 +100 +140
o
3.0 +180 +25 +50 + 75 +100 +125 +150 +175 TJ , JUNCTION TEMPERATURE ( C) TJ , JUNCTION TEMPERATURE (oC)
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF JUNCTION TEMPERATURE
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF JUNCTION TEMPERATURE
(c)2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Typical Performance Curves (Continued)
25 IC , INDUCTIVE SWITCHING CURRENT (A) +25oC VGE = 5V 650 600 550 EAS , ENERGY (mJ) 500 450 400 350 300 10 250 200 5 0 2 4 6 8 10 L, INDUCTANCE (mH) 150 0 2 4 6 L , INDUCTANCE (mH) 8 10 +175oC +25oC VGE = 5V
20
+175 C 15
o
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING CURRENT AS A FUNCTION OF INDUCTANCE
2000 1800 1600 C, CAPACITANCE (pF) 1400 1200 1000 800 600 400 200 0 0 5 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) COES CRES CIES
FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY AS A FUNCTION OF INDUCTANCE
REF IG = 1mA, RL = 1.7, TC = +25oC VCE, COLLECTOR-EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
12 10 8
6 5 VGE, GATE-EMITTER VOLTAGE (V)
VCE = 12V
4 3 VCE = 4V
6 4 VCE = 8V 2 0 0 5 10 15 20 25 30 QG, GATE CHARGE (nC)
2 1 0
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
Typical Performance Curves (Continued)
ZJC , NORMALIZED THERMAL RESPONSE 355 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 325 10-4 10-3 10-2 10-1 100 101 0 2000 4000 6000 8000 10000 t1 , RECTANGULAR PULSE DURATION (s) RGE, GATE-TO- EMITTER RESISTANCE () DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC ) + TC t1 PD t2 BVCER, COLLECTOR-EMITTER BKDN VOLTAGE (V) 350 345 340 25oC 335 175oC
330
10-2 10-5
FIGURE 15. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF GATE-EMITTER RESISTANCE
Test Circuits
RL 2.3mH VDD L = 550H C RGEN = 25 5V RG DUT G E 1/RG = 1/RGEN + 1/RGE RGEN = 50 10V RGE = 50 E G DUT + C
VCC 300V
-
FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING CURRENT TEST CIRCUIT
FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME TEST CIRCUIT
(c)2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Handling Precautions for IGBT's
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT's are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating -The gate-voltage rating of VGEM may be exceeded if IGEM is limited to 10mA. Trademark Emerson and Cumming, Inc
.
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951
(c)2001 Fairchild Semiconductor Corporation
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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